Samsung has started mass production of the industry's first 16Gb GDDR6 memory. We've known for a while that SK Hynix has been working on GDDR6 with a 2018 roll out date in mind, though these chips won't be quite as fast as the Samsung equivalent we saw yesterday. Apart from gaming, this kind of memory can serve in fields such as automotive, artificial intelligence systems, and networks. Also good news for Samsung and for memory supply (and thus pricing and availability of products) is that the company is seeing a 30% gain in manufacturing productivity cranking out its 16Gb GDDR6 versus its 20nm GDDR5.
Samsung Electronics established this industry's biggest lineup of premium memories by being the only business to supply 2.4Gbps 8GB HBM2 DRAM (transmission of 307GB data per second) and 18Gbps 10-nano 16GB and 8Gb GDDR6 DRAMs (transmission of 72GB data per second) and it has been carrying the growth of this market.
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Samsung's GDDR6 memory operates at 1.35V, lowering energy consumption by approximately 35% over GDDR5.
The memory is for use in graphics processing for gaming devices and graphics cards, as well as automotive, network, and AI systems. The company's GDDR5 chips are based on a 20 nm process and are only 8 Gb, so this offers double the density while also increasing performance.
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These numbers are remarkable not just because of the increase over the current generation of memory, but because they are higher than what Samsung had originally claimed at this year's CES, when the company claimed 64Gbps data rates.
These chips, which are aimed at supercomputers and advanced graphics systems, feature a 2.4 Gbps pin speed at 1.2V, nearly double the speed of the first generation HBM2. Memory Bandwidth will also see a considerable bump on next-generation GPUs using GDDR6 VRAM, allowing maximum bandwidth output of around 864 GB/s on 384-bit card and a 576 GB/s on a 256-bit card. So, if you thought the graphics that modern PCs are capable of are impressive, it looks like we'll soon see another leap in graphical performance.
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